DC response, low-frequency noise, and TID-induced mechanisms in 16-nm FinFETs for high-energy physics experiments

Total-ionizing-dose (TID) mechanisms are evaluated in 16 nm Si bulk FinFETs at doses up to 1 Grad(SiO2) for applications high-energy physics experiments. The TID effects through DC and low-frequency noise measurements by varying irradiation bias conditions, transistor channel lengths, fin/finger layouts. response of nFinFETs irradiated under positive gate ultrahigh shows a rebound threshold voltage with significant increase the 1/f amplitude. degradation is related generation border interface traps upper corners STI oxides oxide/channel interfaces. In contrast, pFinFETs have worst due charge trapping oxides, which severely degrades device transconductance total drain current, while negligible visible noise. sensitivity depends strongly on layout. Short-channel devices best tolerance thanks influence halo implantations, designed low number fins because high densities surrounding thick oxides. As guideline IC design, short-channel transistors more than 4-fins may be preferred order facilitate circuit qualification.